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part number s3170 revision a ? august 12, 2004 s3170 2.5 gbps transimpedance amplifier amcc confidential and proprietary 1 data sheet features ? 2 ghz bandwidth ?10 k ? differential transimpedance ? single 3.3 v supply ? 6.9 pa/ (hz) typical noise current density ? 2.2 ma peak to peak max input current ? source terminated differential outputs ? voltage limited outputs ? maximum die size: 1.27 mm by 1.27 mm applications ? sonet oc-48 ? fiber optic data links general description the s3170 is a high-speed transimpedance amplifier (tia) for 2.5 gbps applications. input currents as high as 2.2 ma can be amplified with low duty cycle distor - tion. the low input noise allows signals down to 3.7 a (peak to peak) to be detected with a signal to noise ratio of 22 db (allows for ber< 1e-10). the outputs are voltage limited to 1000 mv, differen - tial, in order to allow a wide input dynamic range without exceeding the input voltage range of the post (limiting) amplifier. figure 1 shows a typical application. figure 1. typical operating circuit dinn dinp serdatop serdaton iin gnd outp s3170 s3078 (limiting amp and cdr) zo = 50 ? outn zo = 50 ? rbypass v cc filt alternate connection v cc
2 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3170 ? 2.5 gbps transimpedance amplifier detailed description figure 2 depicts the overall block diagram of the s3170 transimpedance amplifier. the amplifier cir - cuitry consists of a transimpedance stage and an output driver stage with a 16 db gain. the transimped - ance amplifier converts the photodiode photocurrent to a voltage. the photodiode can be biased by connect - ing it to the rbypass pin or it can be connected directly to v cc . the amplifier gain is linear for an input of up to 125 a. above that the output stage limits. the output voltage is limited at 1000 mv, differential, peak to peak. the output of the transimpedance stage is converted to a differential signal by the combination of the output stage and a bias block. this bias block averages the output of the transimpedance stage and establishes the dc input reference for the output stage. the band - width of this circuit is set by an on-chip capacitor, but can be reduced by adding an off-chip capacitor, c filt . this bandwidth corresponds to the low frequency -3 db cutoff of the tia. increasing the value of c filt will reduce the low frequency -3 db cutoff. with no c filt capacitor added it will be at 45 khz. figure 2. s3170 detailed block diagram vcc gnd rbypass iin outp outn filt bias c filt (optional) 100 ? vcc 1500 ? x 6.7
s3170 ? 2.5 gbps transimpedance amplifier amcc confidential and proprietary 3 revision a ? august 12, 2004 data sheet 1. the coordinates represent the position of the center of the pad in m, with respect to the lower left corner of the die. 2. note: i = input pin, o = output pin, s = supply pin table 1. s3170 pad assignment and description pin name i/o pad # coordinates [x,y] (1) description vcc s 8 9 10 11 12 [868.9, 1051.4] [669.6, 1051.4] [470.8, 1051.4] [271.8, 1051.4] [90.8, 892.5] +3.3 v power supply. gnd s 1 2 3 4 [273, 91.4] [472, 91.4] [670.8, 91.4] [870.1, 91.4] ground. rbypass i 13 15 [100.925, 702.425] [90.9, 293.3] bypass connection for cathode of photodiode. iin i 14 [97.575, 473.975] pin diode input. filt i 7 [1052.3. 777] filter capacitor input. a capacitor to ground can be added at this pad to reduce the low frequency -3 db cutoff. (see design procedures). outn o 6 [1049.275, 567.475] negative transimpedance amplifier output. outp o 5 [1049.275, 375.225] positive transimpedance amplifier output.
4 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3170 ? 2.5 gbps transimpedance amplifier figure 3. bonding pad location pad size is 94 m x 94 m. area of exposed area is 80 m x 80 m. die thickness is 254 m (10 mils) 1. the circuit die size is the smallest possible size of t he die. the lower left-hand corner of the circuit die is the origin of the xy-coordinate system. pad coordinates indicated in table 1 are measured from this origin to the pad's center. 2. the total die size is the largest possible size of the di e. it includes a splicing area around the circuit die. the actual size of any given die may vary in size from the minimum (circuit die) size to the maximum (total die) size. vcc rbypass iin rbypass gnd gnd gnd gnd outn outp filt vcc vcc vcc vcc 1234 5 6 7 8 9 10 11 12 13 14 15 1.15 mm (circuit die size) 1.27 mm (total die size) 1 . 1 5 m m ( c i r c u i t d i e s i z e ) 1 . 2 7 m m ( t o t a l d i e s i z e ) total die size x-axis y-axis (0,0) circuit die size 1 2
s3170 ? 2.5 gbps transimpedance amplifier amcc confidential and proprietary 5 revision a ? august 12, 2004 data sheet electrostatic discharge (esd) sensitivity rating - human body model (hbm): the s3170 is rated to the following esd voltages based upon jedec standard: jesd22-a114-b class 0 - all pins are rated at or above 1000 volts except pins i in , outp and outn. outp and outn are rated at 500 v and i in is rated to 100 volts. adherence to standards for esd protection should be taken duri ng the handling of the devices to ensure that the devices are not dam - aged. the standards to be used are defined in ansi standard ansi/ esd s20.20-1999, "protection of electrical and electronic part s, assemblies and equipment." contact your local fae or sales representative for applicable esd application notes table 2. recommended operating conditions parameter min typ max units ambient temperature, t a -40 +85 c junction operating temperature, t j -20 +105 c voltage on v cc with respect to gnd 3.135 3.3 3.465 v table 3. absolute maximum ratings the following are the absolute maximum stress ratings for t he s3170. stresses beyond those li sted may cause permanent damage to the device. absolute maximum ratings are stress ratings only and opera tion of the device at the maximums stated or any other condit ions beyond those indicated in the "recommended operatin g conditions" of this document are not inferred. exposure to absolute maximum ratin g condi - tions for extended periods may affect device reliability. parameter min typ max units voltage on v cc with respect to gnd -0.5 4 v voltage on all other pads -0.5 v cc +0.3 v storage temperature range -55 150 c
6 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3170 ? 2.5 gbps transimpedance amplifier note: ac electrical characterist ics guaranteed by characterization. table 4. ac electrical characteristics (v cc = 3.3 v 5%, t a = -40c to +85c) parameter description min typ max units conditions r t ac transimpedance 6.9 10 kv/a 50 ohm load bw -3 db bandwidth 1.9 2.3 2.7 ghz 0.5 pf photodiode capacitance, 1.5 input bond wire inductance bw lf low frequency -3 db cutoff 45 57 khz no c filt connected i pk maximum input current 2.2 ma peak-to-peak v od differential output voltage 1000 1200 mv peak-to-peak, differential i in, lim input current at which output limits 100 125 a 1 db compression point i nd input noise current density 6.84 8.5 pa/ (hz) 0 ? 1.8 ghz i n input noise current 290 360 na (output rms noise)/rt, 1.8 ghz bandwidth j t total jitter (pk to pk) (at 1e-12 ber) 0.12 input is 2.488 gbps, 2 23 - 1 prbs. i in = 2.2 ma ripple output ripple -0.5 +0.5 db 1 - 1600 mhz group delay group delay variation -31 +31 ps 100 - 2000 mhz s22 output reflection coefficient -18 db 1 - 2500 mhz r out output impedance 45 50 58 ? table 5. dc electrical characteristics (v cc = 3.3 v 5%, ta = -40c to +85c) parameter description min typ max units conditions i cc supply current 40 57 ma v bias input bias voltage 0.79 0.92 1.0 v v cm common mode output voltage v cc -0.9 v cc -0.65 v cc -0.25 v 50 ? line termination to gnd (ac coupled) or 100 ? line-to-line termination.
s3170 ? 2.5 gbps transimpedance amplifier amcc confidential and proprietary 7 revision a ? august 12, 2004 data sheet design procedures determining capacitor values c filt can be selected using the formula: low frequency -3db cutoff = 1 / [2 *400 k ? *(10pf + c filt )] application information filtering through rbypass to reduce the effect of supply voltage noise at the cathode of the photodiode, the cathode connection to v cc should be made throug h the rbypass resistor. the rbyp ass resistor and an external capacitor to ground at the cathode of the photodiode will act as a filter to reduce th is noise and dampen any resonance at the cathode of the photodiode. wire bonding and layout information for best performance all gnd pads should be connected and the bond wire inductance between the photodiode and the iin pin should be kept to below 1.5 nh ? 2 nh. the back of the die is not metallized and should be con - nected to ground or left electrically unconnected. the outputs outp and outn should be terminated equally to pr event instabilities. figure s 4 and 5 show differen - tial and single-ended termination.
8 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3170 ? 2.5 gbps transimpedance amplifier figure 4. output differential termination figure 5. output single-ended termination i in gnd outp limiting amplifier zo = 50 ? outn zo = 50 ? rbypass vcc vdd filt alternate connection 100 ? s3170 filt c i in gnd outp s3170 zo = 50 ? outn zo = 50 ? rbypass vcc vdd filt alternate connection 50 ? filt 50 ? c
s3170 ? 2.5 gbps transimpedance amplifier amcc confidential and proprietary 9 revision a ? august 12, 2004 data sheet typical operating characteristics figure 6. frequency response (gain vs. frequency) figure 7. eye diagram (at 2.5 gbps) i in = 2.2 ma) figure 8. output voltage vs. input current figure 9. supply current vs. temperature
10 amcc confidential and proprietary revision a ? august 12, 2004 data sheet s3170 ? 2.5 gbps transimpedance amplifier document revision history revision date description a 08/12/04 ? pg. 6, table 4, changed s22 max from -21 db to -18 db; changed r out max from 55 ? to 58 ? . nc 2/28/01 ? production release version.
s3170 ? 2.5 gbps transimpedance amplifier amcc confidential and proprietary 11 revision a ? august 12, 2004 data sheet ordering information applied micro circuits corporation 6290 sequence dr., san diego, ca 92121 phone: (858) 450-9333 ? (800) 755-2622 ? fax: (858) 450-9885 http://www.amcc.com amcc reserves the right to make changes to its products, its datasheets, or related documentation, without notice and war- rants its products solely pursuant to its terms and conditions of sale, only to substantially comply with the latest available datasheet. please consult amcc?s term and conditions of sale for its warranties and other terms, conditions and limitations. amcc may discontinue any semiconductor product or service wit hout notice, and advises its customers to obtain the latest version of relevant information to verify , before placing orders, that the informati on is current. amcc does not assume any lia - bility arising out of the application or use of any product or circuit described herein, neither does it convey any license und er its patent rights nor the rights of others. amcc reserves the ri ght to ship devices of higher grade in place of those of lower grade. amcc semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. amcc is a registered trademark of appli ed micro circuits corporation. copyright ? 2005 applied micro circuits corporation. xx prefix package device s - integrated circuit 3170 x xxxx prefix device package di - industrial grade die

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